Method for fabricating devices in III-V semiconductor substrates

Stock material or miscellaneous articles – Composite – Of b – n – p – s – or metal-containing material

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428689, 428699, 428901, 428927, 357 16, 357 20, 357 25, 357 70, B32B 900

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050395785

ABSTRACT:
A new technique for forming non-rectifying electrical contacts to III-V semiconductor materials, without the use of dopants or of an alloying procedure, is disclosed. In accordance with this technique, an electrical contact is formed simply by depositing a region of material (onto the semiconductor material) having a composition which includes at least one metal element and at least one of three specific Group V elements, i.e., P, As, or Sb, and having a bulk electrical resistivity equal to or less than about 250 .mu..OMEGA.-cm. Alternatively, a contact is formed by depositing nickel, or a nickel-containing material essentially free of gold and silver, and having a composition which does not include any of the three Group V elements. The nickel, or nickel-containing material, is then reacted with the substrate to form a compound having a composition which includes nickel as well as one of the three Group V elements.

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