Fishing – trapping – and vermin destroying
Patent
1988-05-05
1990-11-06
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437190, 437203, H01L 2128, H01L 2160
Patent
active
049686445
ABSTRACT:
A method for fabricating a device, e.g., a semiconductor device, is disclosed which includes the step of reacting at least two reactive entities to form a metal-containing material on a region or regions of a processed or unprocessed substrate. Inherent in the method is the recognition that one of the reactive entities will often react with substrate material to produce previously unrecognized, and highly undesirable, results, e.g., the almost complete erosion of previously fabricated device components. Thus, and in accordance with the inventive method, any one of a variety of techniques is employed to reduce the reaction rate between the substrate material and the entity reacting with this material, while avoiding a substantial reduction in the reaction rate between the two entities.
REFERENCES:
patent: 4343676 (1982-08-01), Tarng
patent: 4349408 (1982-09-01), Tarng et al.
patent: 4359490 (1982-11-01), Lehrer
patent: 4501769 (1985-02-01), Hieber
patent: 4517225 (1985-05-01), Broadbent
patent: 4532702 (1985-08-01), Gigante et al.
patent: 4540609 (1985-09-01), Tsao
patent: 4552783 (1985-11-01), Stoll et al.
patent: 4582563 (1986-05-01), Hazuki et al.
patent: 4595608 (1986-06-01), King et al.
patent: 4597167 (1986-07-01), Moriya et al.
patent: 4617087 (1986-10-01), Iyer et al.
patent: 4629635 (1986-12-01), Brors
Morosanu et al., "Kinetics and Properties of Chemically Vapour Deposited Tungsten Films on Silicon Substrates," Thin Solid Films, 52 (1978), 181-194.
Miller et al., "Hot-Wall CVD Tungsten for VLSI," Solid State Technology, 79-82 (1980).
Broadbent et al., "Selective Low Pressure Chemical Vapor Deposition of Tungsten," Extended Abstracts, The Electrochemical Society Spring Meeting, San Francisco, Calif., Abstract 420 (1983).
R. A. Gargini, "Tungsten Barrier Eliminates VLSI Circuit Shorts", Vacuum Technology, 141-147 (1983).
Tsao et al., "Low Pressure Chemical Vapor Deposition of Tungsten on Polycrystalline and Single-Crystal Silicon via the Silicon Reduction" J. Electrochemical Society, Nov. 1984, pp. 2702-2708.
R. A. Levy et al., "Selective LDCVD Tungsten for Contact Barrier Applications", Journal of the Electrochemical Society, vol. 133, No. 9, Sep. 1986, pp. 1905-1912.
M. L. Green et al., "Structure of Selective Low Pressure Chemically Vapor-Deposited Films of Tungsten", Journal of the Electrochemical Society, vol. 132, No. 5, May 1985, pp. 1243-1250.
K. C. Saraswat et al., "Selective CVD of Tungsten for VLSI Technology", Extended Abstracts, vol. 84, No. 1, May 6-11, 1984, pp. 114-115.
J. Y. Chen et al., "Refractory Metals and Metal Silicides for VLSI Devices", Solid State Technology, vol. 27, No. 8, Aug. 1984, pp. 145-148.
Morosancu et al., "Kinetics and Properties of Chemically Vapour-Deposited Tungsten Films on Silicon Substrates", Thin Solid Films, 52 (1978), 181-194.
Schmitz et al., "Comparison of Step Coverage and Other Aspects of the H2/WF.sub.6 and Sitty/WF.sub.6 Reduction Schemes Used in Blanket LPCVD of Tungsten", Procs. Tenth Conf. on Chem Vol. Dep. (Electrochem Soc.), Edited by Cullen et al., vol. 87-8, Oct. 1987.
Swirhum et al., "Contact Resistance of LPCVD W/Al and Ptsi/W/Al Metallization", 8179, IEEE Electron Device Letters, EDL-5 (1984), Jun. No. 6, NY, pp. 209-211.
Gallagher Patrick K.
Green Martin L.
Levy Roland A.
AT&T Bell Laboratories
Chaudhuri Olik
Griffis Andrew
Pacher Eugene E.
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