Method for fabricating defect-free compound semiconductor thin f

Details Method for fabricating defect-free compound semiconductor thin f Method for fabricating defect-free compound semiconductor thin f

1994-11-29

1997-11-11

Kunemund, Robert

Fishing, trapping, and vermin destroying

437146, 437959, 437962, H01L 2120

Patent

active

056863500

ABSTRACT:
A method for fabricating a defect-free compound semiconductor thin film on a dielectric thin film which oxidizes multi-semiconductor layers consisting of a hetero compound semiconductor thin film made of one of GaAs, InGaAs or InAs over a thin film containing a carbon impurity of a high concentration and made of AlGaAs series by an annealing at a vapor ambient, thereby rapidly growing a hetero-semiconductor thin film over a dielectric thin film made of Al.sub.2 O.sub.3 with no defect.

REFERENCES:
patent: 5116455 (1992-05-01), Daly
patent: 5321302 (1994-06-01), Shimawaki
"Properties and Use of In.sub.0.5 (Al.sub.x Ga.sub.1-x).sub.0.5 P and Al.sub.x Ga.sub.1-x As Native Oxides in Heterostructure Lasers" by Kish et al in Jr. of Electronic Materials vol. 29 (12) 1992, pp. 1133-1139.

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