Method for fabricating dc SQUID using high-Tc...

Details Method for fabricating dc SQUID using high-Tc... Method for fabricating dc SQUID using high-Tc...

2005-06-21

2005-06-21

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Having superconductive component

C505S330000

Reexamination Certificate

active

06908771

ABSTRACT:
A DC superconducting interference device (SQUID) utilizes intrinsic Josephson tunnel junctions formed naturally in stacks of high-Tc superconducting single crystals, where the double-side cleaving technique is used to define a ring-shaped high-Tc superconducting structure with two stacks of intrinsic Josephson junctions inserted in the ring.

REFERENCES:
patent: 5439875 (1995-08-01), Tanaka et al.
patent: 6605225 (2003-08-01), Yamashita et al.
patent: 2004/0149983 (2004-08-01), Lee et al.

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