Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2006-10-12
2009-10-13
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S386000, C438S393000, C438S523000, C438S618000, C438S628000, C257SE21011, C257SE21019, C257SE21279, C257SE21293, C257SE21523
Reexamination Certificate
active
07601604
ABSTRACT:
A method of forming one or more capacitors on or in a substrate and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate, lining the trench with a first copper-barrier layer, and substantially filling the trench with a first copper layer. The first copper layer is substantially chemically isolated from the substrate by the first copper-barrier layer. A second copper-barrier layer is formed over the first copper layer and a first dielectric layer is formed over the second copper-barrier layer. The dielectric layer is substantially chemically isolated from the first copper layer by the second copper-barrier layer. A third copper-barrier layer is formed over the dielectric layer and a second copper layer is formed over the third copper-barrier layer. The second copper layer is formed in a non-damascene process.
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Cuthbertson Alan
Oladeji Isaiah O.
Atmel Corporation
Lebentritt Michael S
Schwegman Lundberg & Woessner, P.A.
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