Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2007-02-06
2009-08-04
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S723000, C257S777000, C257S416000, C257SE23013
Reexamination Certificate
active
07569906
ABSTRACT:
A first semiconductor chip includes a fixed electrode formed on a first semiconductor substrate and a plurality of first metal spacers formed on a first interlayer dielectric. A second semiconductor chip includes a vibrating electrode formed on a second semiconductor substrate and a plurality of second metal spacers formed on a second interlayer dielectric. The first and second semiconductor chips are metallically bonded to each other using the first and second metal spacers. An air gap is formed in a region of the condenser microphone located between the first semiconductor chip and the second semiconductor chip except bonded regions of the first and second metal spacers.
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Katayama Takuma
Mori Mitsuyoshi
Tanaka Keisuke
Yamaguchi Takumi
McDermott Will & Emery LLP
Panasonic Corporation
Parekh Nitin
LandOfFree
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