Method for fabricating compound semiconductor laser

Details Method for fabricating compound semiconductor laser Method for fabricating compound semiconductor laser

1996-03-21

1998-08-04

Niebling, John

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438 46, 438506, 438681, 257611, 148DIG41, 148DIG110, H01L 2100

Patent

active

057892733

ABSTRACT:
After a compound semiconductor layer including InP is formed on a semiconductor substrate, a compound semiconductor layer including As is epitaxially grown by metal organic chemical vapor deposition method using an organic As as the material for feeding the As.

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patent: 5115284 (1992-05-01), Kawasaki
patent: 5128275 (1992-07-01), Takikawa et al.
patent: 5332451 (1994-07-01), Hata et al.
patent: 5480833 (1996-01-01), Kikkawa et al.
patent: 5548136 (1996-08-01), Asai
patent: 5549749 (1996-08-01), Asai
patent: 5569953 (1996-10-01), Kikkawa et al.

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