Method for fabricating complementary metal oxide...

Details Method for fabricating complementary metal oxide... Method for fabricating complementary metal oxide...

2006-04-18

2006-04-18

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S057000, C438S200000

Reexamination Certificate

active

07029942

ABSTRACT:
The present invention relates to a method for fabricating a complementary metal oxide semiconductor (CMOS) image sensor. The method includes the step of: (a) forming a substrate of a first conductive type defined with a photodiode region and a native second conductive channel transistor region; and (b) forming a first conductive type impurity region by performing an ion-implantation process for forming a second conductive type channel stop region with a first conductive impurity ion, wherein the first conductive type impurity region is extended to the native second conductive type channel transistor region.

REFERENCES:
patent: 6661045 (2003-12-01), Ishiwata
patent: 6897082 (2005-05-01), Rhodes et al.
patent: 2004/0178430 (2004-09-01), Rhodes et al.

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