Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to nonconductive state
Reexamination Certificate
2005-01-25
2005-01-25
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to nonconductive state
Reexamination Certificate
active
06846705
ABSTRACT:
The present invention relates to a method for fabricating a complementary metal oxide semiconductor (CMOS) image sensor having a redundancy module. The method includes the steps of: forming a semiconductor substrate structure including a fuse and a pad deposited respectively in a redundancy region and a pad region of a substrate and a passivation layer deposited over the semiconductor substrate structure; etching a portion of the passivation layer disposed above the pad to open the pad and simultaneously etching another portion of the passivation layer disposed above the fuse and a partial portion of the insulation layer with use of a photoresist pattern as an etch mask; forming an over coating layer (OCL) pattern on the photoresist, the OCL pattern masking the pad; etching the exposed partial portion of the insulation layer with use of the photoresist pattern as an etch mask to open and then cut the fuse; and removing the OCL pattern and the photoresist pattern.
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No affiliations
Blakely & Sokoloff, Taylor & Zafman
Mulpuri Savitri
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