Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Patent
1997-06-27
1998-12-29
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
438 69, 257294, 257440, 430 4, G03C 184
Patent
active
058540911
ABSTRACT:
A method for fabricating a color solid-state image sensor having a plurality of photoelectric conversion regions includes the steps of respectively forming a magenta color filter layer, a yellow color filter layer, and a cyan color filter layer over three photoelectric conversion regions of the plurality of photoelectric conversion regions; and implanting ions into the magenta and cyan color filter layers, thereby reducing transmittivity of blue composition of light which passes the magenta and cyan color filter layers.
Back Euy Hyeon
Kim Sam Yeoul
Bowers Jr. Charles L.
Christianson Keith
LG Semicon Co. Ltd.
LandOfFree
Method for fabricating color solid-state image sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating color solid-state image sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating color solid-state image sensor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1423952