Method for fabricating CMOS image sensor protecting low...

Details Method for fabricating CMOS image sensor protecting low... Method for fabricating CMOS image sensor protecting low...

2007-06-19

2007-06-19

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S058000, C438S065000, C438S070000, C257SE31121

Reexamination Certificate

active

10971183

ABSTRACT:
A method for fabricating a complementary metal oxide semiconductor image sensor is capable of protecting a low temperature oxide from delaminating a passivation layer. The method includes the steps of: forming a passivation layer on a pad metal; exposing a predetermined part of the pad metal by patterning the passivation layer using a first pad mask; forming an oxide layer on the exposed pad metal and the passivation layer formed around the pad open region; forming a color filter, a planarization layer and a microlens, sequentially; forming a low temperature oxide layer on the above structure to protect the microlens; and opening the pad metal by selectively etching the low temperature oxide layer and the oxide layer formed around the pad open region by a second pad mask.

REFERENCES:
patent: 6617189 (2003-09-01), Chen et al.
patent: 6670205 (2003-12-01), Byun

Affiliated with

Also associated with

Rating

Method for fabricating CMOS image sensor protecting low... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating CMOS image sensor protecting low..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating CMOS image sensor protecting low... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3865363