Method for fabricating CMOS image sensor

Details Method for fabricating CMOS image sensor Method for fabricating CMOS image sensor

2009-12-11

2011-12-27

Thai, Luan C (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S059000, C438S057000

Reexamination Certificate

active

08084290

ABSTRACT:
A method of forming a CMOS image sensor and a CMOS image sensor. A method of forming a CMOS image sensor may include forming a plurality of photodiodes on and/or over a semiconductor substrate at regular intervals, forming an interlayer insulating film on and/or over an entire surface of a semiconductor substrate including photodiodes, coating an organic compound on and/or over an entire surface of an interlayer insulating film, coating photoresist on and/or over an organic compound, subjecting a photoresist to exposure and/or development to form a photoresist pattern which may expose an interlayer insulating film opposite to a photodiode region, selectively etching a portion of an exposed interlayer insulating film using a photoresist pattern as a mask, and/or removing a photoresist pattern.

REFERENCES:
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patent: 5837113 (1998-11-01), Suzuki et al.
patent: 6043481 (2000-03-01), Tan et al.
patent: 7144799 (2006-12-01), Chen et al.
patent: 7264976 (2007-09-01), Deng et al.
patent: 7384730 (2008-06-01), Hata et al.

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