Method for fabricating CMOS image sensor

Details Method for fabricating CMOS image sensor Method for fabricating CMOS image sensor

2005-12-28

2009-06-02

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S066000, C438S305000

Reexamination Certificate

active

07541210

ABSTRACT:
A CMOS image sensor and a method for fabricating the same are disclosed, in which transfer characteristics are improved. The method includes forming a photodiode region and a second conductive type ion region on a surface of a first conductive type substrate by implanting a second conductive type impurity ion into an entire surface of the substrate where a transistor is to be formed, forming a second conductive type lightly doped ion region in the substrate corresponding to the photodiode region by lightly implanting a second conductive type impurity ion only in an area where the photodiode region is opened, and diffusing the second conductive type lightly doped ion region into the second conductive type ion region by a thermal process.

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