Method for fabricating CMOS image sensor

Details Method for fabricating CMOS image sensor Method for fabricating CMOS image sensor

2005-07-18

2008-10-14

Lee, Eugene (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S069000, C438S071000, C438S072000, C257SE31127, C257SE27133

Reexamination Certificate

active

07435615

ABSTRACT:
A method for fabricating a CMOS image sensor improves the characteristics of device by preventing a pad from being contaminated without damaging a micro-lens. The method includes steps of forming a device protection layer on a semiconductor substrate including at least one photo-sensing device and at least one metal pad disposed in a logic circuit area corresponding to the at least one photo-sensing device, the device protection layer covering the at least one metal pad; forming each of a first planarization layer, a color filter layer, and a second planarization layer in sequence on the device protection layer in correspondence with the at least one photo-sensing device; forming on the second planarization layer a material layer for micro-lens formation; exposing a predetermined portion of the metal pad by selectively etching the device protection layer; and forming a micro-lens for directing incident light onto the at least one photo-sensing device by reflowing, after the exposing step, the material layer for micro-lens formation.

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