Method for fabricating CMOS image sensor

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE31001

Reexamination Certificate

active

11320482

ABSTRACT:
In a method for fabricating a CMOS image sensor, microlenses are formed with a silicon nitride layer formed on a pad such that it is possible to decrease a height of microlens and to improve a refraction ratio. In addition to main lenses in shape of curved surface, inner lenses are formed in shape of a sidewall spacer by etching oxide and nitride layers at a high etching selection ratio.

REFERENCES:
patent: 6171883 (2001-01-01), Fan et al.
patent: 6307243 (2001-10-01), Rhodes
patent: 6362498 (2002-03-01), Abramovich
patent: 6379992 (2002-04-01), Jo
patent: 6686294 (2004-02-01), Kawai
patent: 2005/0139832 (2005-06-01), Jeon
patent: 2005/0274968 (2005-12-01), Kuo et al.
patent: 2006/0141647 (2006-06-01), Kim
patent: 10-2001-0004114 (2001-01-01), None
patent: 10-20010083208 (2001-08-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for fabricating CMOS image sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating CMOS image sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating CMOS image sensor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3860502

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.