Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Patent
1997-04-24
2000-04-04
Chang, Joni
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
438 46, 438167, H01L 2100
Patent
active
060460644
ABSTRACT:
Method for fabricating a compound semiconductor device including the steps of forming an active layer on a substrate, forming a plurality of ohmic electrodes on predetermined regions of the active layer, forming a mask material layer on the entire surface of the active layer inclusive of the ohmic electrodes, removing the mask material layer from predetermined regions thereof to open regions of the active layer between the ohmic electrodes and at least any one of the ohmic electrodes, etching the opened regions of the active layer each to a predetermined depth, and removing the mask material layer and forming a gate electrode on each of the opened regions of the active layer each having been etched to the predetermined depth, whereby the possibility of forming devices having threshold voltages different from one another on the same substrate allows application of the device of the present invention to variety of MMIC.
REFERENCES:
patent: 5411914 (1995-05-01), Chen et al.
patent: 5668049 (1997-09-01), Chakrabarti et al.
patent: 5807765 (1998-09-01), Razeghi et al.
Chung Ki-Woong
Kim Chang-Tae
Chang Joni
LG Electronics Inc.
White John P.
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