Method for fabricating charge coupled device image sensor

Details Method for fabricating charge coupled device image sensor Method for fabricating charge coupled device image sensor

1997-09-22

1999-11-09

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 76, 438146, 438577, 438951, H01L 2100, H01L 21339, H01L 2128, H01L 2144

Patent

active

059813091

ABSTRACT:
A method for fabricating a CCD image sensor includes the steps of forming a P type well in a surface of a semiconductor substrate, forming a buried CCD (BCCD) in a surface of the P type well, forming an offset gate and a reset gate on the BCCD at a predetermined interval, forming a floating diffusion region in the BCCD between the offset gate and the reset gate, forming a mask layer on an entire surface of the semiconductor substrate to form a contact hole in the floating diffusion region, forming a metal layer on the entire surface of the semiconductor substrate including the contact hole, and selectively removing the metal layer on the mask layer together with the mask layer to form a floating gate in the contact hole.

REFERENCES:
patent: 4149307 (1979-04-01), Henderson
patent: 4268951 (1981-05-01), Elliott et al.
patent: 4594604 (1986-06-01), Kub
patent: 4677453 (1987-06-01), Matsumoto et al.
patent: 4912545 (1990-03-01), Go
patent: 5192990 (1993-03-01), Stevens

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