Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Patent
1997-01-15
1999-01-12
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
438981, H01L 21339
Patent
active
058588116
ABSTRACT:
The method for fabricating a charge coupled device disclosed includes the steps of forming a gate oxide film and forming a transfer electrode. The provisional oxide film is formed on a semiconductor substrate, and the provisional oxide film at a transfer electrode formation region is selectively etched away. The transfer electrode from a polycrystalline silicon film on the gate oxide film of the transfer electrode formation region is selectively formed, and the provisional oxide film between transfer electrodes is etched away. Since the oxide film which protects the silicon substrate surface (oxide film/silicon interface) of the second layer transfer electrode formation region during the patterning of the first layer polycrystalline film and the insulating oxide film which covers the first layer transfer electrode surface, is formed in the two-step oxidation process, it is possible to adjust the thicknesses of the two oxide films as desired.
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patent: 5114833 (1992-05-01), Erhardt
patent: 5238863 (1993-08-01), Fukusho et al.
patent: 5492852 (1996-02-01), Minami
Chaudhari Chandra
NEC Corporation
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