Method for fabricating capacitors of semiconductor device

Details Method for fabricating capacitors of semiconductor device Method for fabricating capacitors of semiconductor device

1995-08-02

1996-08-27

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 47, 437 52, 437919, 148DIG14, H01L 2170

Patent

active

055500803

ABSTRACT:
A method for fabricating capacitors of a semiconductor device capable of increasing the surface area of the storage electrode using both an adjustment for the dimension of a contact mask for the storage electrode and a technique of selective growth, thereby achieving an improvement in capacitance. The method includes the steps of forming a storage electrode with an increased surface area using the technique for adjusting the contact mask dimension, the technique of selective growth and a wet etch process, and then forming a dielectric film and a plate electrode over the storage electrode.

REFERENCES:
patent: 5162253 (1992-11-01), Takeuchi
patent: 5206787 (1993-04-01), Fujoka
patent: 5385859 (1995-01-01), Enomoto
patent: 5441909 (1995-08-01), Kim

Affiliated with

Also associated with

Rating

Method for fabricating capacitors of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating capacitors of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating capacitors of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1056041