Method for fabricating capacitor using...

Details Method for fabricating capacitor using... Method for fabricating capacitor using...

2005-10-04

2005-10-04

Smith, Brad (Department: 2829)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S386000, C438S488000

Reexamination Certificate

active

06951795

ABSTRACT:
The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a storage node oxide layer having a hole for forming a storage node on a substrate; forming a silicon layer on the storage node oxide layer having the hole; forming a photoresist on the silicon layer such that the photoresist fills the hole; forming a storage node having a cylinder shape inside of the hole by removing the silicon layer disposed on an upper surface of the storage node oxide layer; ion-implanting an impurity onto head portions of the storage node under a state that the photoresist remains; removing the photoresist; and growing metastable-polysilicon (MPS) grains on inner walls of the storage node.

REFERENCES:
patent: 6309975 (2001-10-01), Wu et al.
patent: 6319788 (2001-11-01), Gruening et al.
patent: 6599840 (2003-07-01), Wu et al.
patent: 6828191 (2004-12-01), Wurster et al.
patent: 2001/0012660 (2001-08-01), Parekh et al.
patent: 2001-267527 (2001-09-01), None
patent: 2002-368133 (2002-12-01), None

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