Method for fabricating capacitor of semiconductor memory device

Details Method for fabricating capacitor of semiconductor memory device Method for fabricating capacitor of semiconductor memory device

1994-11-18

1995-09-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 52, 437919, 148DIG14, H01L 218242

Patent

active

054515394

ABSTRACT:
A method for fabricating a capacitor of a semiconductor device, including the steps of: sequentially forming a planarized insulating oxide film, a barrier layer, and a first electrode layer over a semiconductor substrate; forming a first contact hole; forming electrode material spacers respectively on side walls of the first contact hole; forming a second contact hole for exposing an impurity diffusion region of the semiconductor substrate; forming a second electrode layer such that it is in contact with the impurity diffusion region; selectively removing an upper portion of the second electrode layer disposed around a region where the first contact hole is defined, thereby forming a second-electrode layer pattern; forming oxide film spacers on side walls of the second-electrode layer pattern; etching the second-electrode layer pattern, the second electrode layer and the first electrode layer until an upper surface of the barrier layer is exposed, thereby forming a first-electrode layer pattern and outer and inner electrode material walls disposed on the first-electrode layer pattern; removing the oxide film spacers; and sequentially forming a dielectric film and a plate electrode over the entire exposed surface of the resulting structure.

REFERENCES:
patent: 5362666 (1994-11-01), Dennison
patent: 5372965 (1994-12-01), Ryou
patent: 5389560 (1995-02-01), Park
patent: 5389566 (1995-02-01), Lage

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