Method for fabricating capacitor of semiconductor memory device

Details Method for fabricating capacitor of semiconductor memory device Method for fabricating capacitor of semiconductor memory device

1993-12-30

1994-12-13

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 60, 437919, H01L 2170

Patent

active

053729650

ABSTRACT:
There is disclosed a method for fabricating a capacitor of semiconductor memory device, capable of securing an electrostatic capacity useful to high integration of semiconductor device. In accordance with the method, a contact pad, a first polysilicon film, a second polysilicon film and a third polysilicon film are utilized as a charge storage electrode, so that the charge storage electrode's surface area comes to be enlarged, bringing about increasing the capacity. In addition, a plate electrode is made by forming an empty region within the charge storage electrode, so that the resulting charge storage electrode can be maximized in capacity by the method. Consequently, a highly integrated DRAM cell can be fabricated and the memory device reliability can be improved, in accordnce with the present invention.

REFERENCES:
patent: 5268322 (1993-12-01), Lee et al.

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