Method for fabricating capacitor of semiconductor memory device

Details Method for fabricating capacitor of semiconductor memory device Method for fabricating capacitor of semiconductor memory device

1994-12-01

1995-09-05

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437192, 437919, H01L 218242

Patent

active

054478820

ABSTRACT:
A method for fabricating a capacitor of a semiconductor memory device, capable of forming a capacitor having a relatively high capacitance as compared to an occupied area of a corresponding memory cell and yet exhibiting a minimized topology, in a simplified manner, thereby achieving improvements in the reliability and integration degree of the semiconductor memory device by forming an interlayer insulating film over a semiconductor substrate, removing a selected portion of the interlayer insulating film to form a contact hole through which a predetermined surface portion of semiconductor substrate corresponding to a region defined as a contact for the capacitor is partially exposed, burying a tungsten in the contact hole to form a contact plug, forming a storage electrode on the interlayer insulating film such that the storage electrode is in contact with the contact plug, selectively etching the storage electrode to a predetermined depth to form a plurality of recesses at the storage electrode, and sequentially forming a dielectric film and a plate electrode over the entire exposed surface of the recessed storage electrode.

REFERENCES:
patent: 5273925 (1993-12-01), Yamanaka
patent: 5278091 (1994-01-01), Fazan et al.
patent: 5364809 (1994-11-01), Kwon et al.

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