Method for fabricating capacitor of semiconductor device

Details Method for fabricating capacitor of semiconductor device Method for fabricating capacitor of semiconductor device

2005-06-15

2010-12-28

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Making passive device

C438S629000, C438S637000, C438S638000, C438S639000, C438S640000, C438S668000, C438S672000, C438S675000, C438S701000, C438S702000, C438S254000, C438S255000, C438S397000, C257SE21649

Reexamination Certificate

active

07858483

ABSTRACT:
A method for forming a capacitor of a semiconductor device includes forming a first insulation layer having a storage node plug on a semiconductor substrate; forming an etch stop layer and a second insulation layer sequentially on the substrate having the first insulation layer; forming a hole exposing a portion of the storage node plug by selectively etching the second insulation layer by using the etch stop layer; recessing a portion of the storage node plug exposed by the hole; forming a barrier metal layer on a surface of the recessed storage node plug; forming a storage node electrode connected to the storage node plug through the barrier metal layer in the hole; and forming a dielectric layer and a metal layer for a plate electrode sequentially on the storage node electrode.

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