Method for fabricating capacitor of semiconductor device

Details Method for fabricating capacitor of semiconductor device Method for fabricating capacitor of semiconductor device

2006-09-12

2006-09-12

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making passive device

Planar capacitor

C438S396000

Reexamination Certificate

active

07105417

ABSTRACT:
The present invention provides a method of fabricating a capacitor for a semiconductor device. The method includes: forming sequentially a lower electrode and a dielectric layer having a high dielectric constant over a semiconductor substrate which have gone through predetermined processes; forming sequentially a first metal layer and a poly-silicon layer over the dielectric layer; forming an upper electrode pattern by pattering the poly-silicon layer and the first metal layer; forming a second metal layer covering the upper electrode pattern on an entire surface of the semiconductor substrate; and forming an upper electrode constituted with the second metal layer, the poly-silicon layer and the first metal layer by patterning the second metal layer so that the second metal layer is connected with the first metal layer.

REFERENCES:
patent: 6320213 (2001-11-01), Kirlin et al.
patent: 6358794 (2002-03-01), Oh
patent: 6359295 (2002-03-01), Lee et al.
patent: 6642100 (2003-11-01), Yang et al.
patent: 6809000 (2004-10-01), Nakao et al.
patent: 2001/0035550 (2001-11-01), Yamazaki et al.
patent: 000472135 (1996-02-01), None
patent: 1999-25236 (1999-04-01), None
patent: 2001-109725 (2001-12-01), None
Wolf et al. Silicon Processing for the VLSI Era, vol. 1- Process Technology, Second Edition, Lattice Press 2000, pp. 21 219.

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