Method for fabricating capacitor of semiconductor device

Details Method for fabricating capacitor of semiconductor device Method for fabricating capacitor of semiconductor device

1996-05-16

1999-07-06

Chang, Joni

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438240, H01L 2100, H01L 218242

Patent

active

059207612

ABSTRACT:
A method for fabricating a capacitor for a semiconductor device includes the steps of depositing an insulating layer on a substrate, selectively removing the insulating layer and forming a first contact hole, forming a conductive semiconductor layer in the contact hole to a predetermined depth, selectively removing the insulating layer adjacent the first contact hole and forming a second contact hole, forming a first electrode in the second contact hole, forming a dielectric thin film on the first electrode, and forming a second electrode on the dielectric thin film.

REFERENCES:
patent: 5335138 (1994-08-01), Sandhu
patent: 5534458 (1996-07-01), Okudaira et al.
patent: 5622893 (1997-04-01), Summerfelt et al.
patent: 5665628 (1997-09-01), Summerfelt

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