Method for fabricating capacitor of semiconductor device

Details Method for fabricating capacitor of semiconductor device Method for fabricating capacitor of semiconductor device

1997-02-03

1997-12-30

Tsai, Jey

Fishing, trapping, and vermin destroying

437919, 437 52, H01L 2170

Patent

active

057029741

ABSTRACT:
A method for fabricating a capacitor of a semiconductor device. The capacity of the capacitor is increased through enlargement of the surface area of storage electrode by providing a plurality of side walls which are of prominence and depression to a cylindrical storage electrode such that it can significantly contribute to the high integration of semiconductor devices.

REFERENCES:
patent: 5164337 (1992-11-01), Ogawa et al.
patent: 5330928 (1994-07-01), Tseng
patent: 5416037 (1995-05-01), Sato et al.
patent: 5422295 (1995-06-01), Choi et al.
patent: 5432116 (1995-07-01), Keum et al.
patent: 5436186 (1995-07-01), Hsue et al.
patent: 5436187 (1995-07-01), Tanigawa
patent: 5436188 (1995-07-01), Chen
patent: 5438010 (1995-08-01), Saeki
patent: 5460999 (1995-10-01), Hong et al.
patent: 5478770 (1995-12-01), Kim
patent: 5480826 (1996-01-01), Sugahara et al.
patent: 5534457 (1996-07-01), Tseng et al.
patent: 5573967 (1996-11-01), Tseng

Affiliated with

Also associated with

Rating

Method for fabricating capacitor of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating capacitor of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating capacitor of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-201855