Method for fabricating capacitor in semiconductor device

Details Method for fabricating capacitor in semiconductor device Method for fabricating capacitor in semiconductor device

2005-08-09

2005-08-09

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

Reexamination Certificate

active

06927142

ABSTRACT:
Disclosed is a method of fabricating a capacitor of a semiconductor device, which can produce an MIM capacitor in which an insulator film is formed to have a positive slope by means of a polymer, thereby preventing leakage of current in the capacitor. The method comprises the steps of: sequentially forming a first metal film, an insulator film, and a second metal film on a semiconductor substrate; patterning a second metal film to form an upper electrode; etching the insulator film using the upper electrode as a mask, and simultaneously forming a polymer at one side of the upper electrode; etching the insulator film which is not protected by the polymer, thereby removing the insulator film; and removing the polymer formed at said one side of the upper electrode.

REFERENCES:
patent: 6452779 (2002-09-01), Adler et al.

Affiliated with

Also associated with

Rating

Method for fabricating capacitor in semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating capacitor in semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating capacitor in semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3483530