Method for fabricating capacitor in semiconductor device

Details Method for fabricating capacitor in semiconductor device Method for fabricating capacitor in semiconductor device

2011-05-31

2011-05-31

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S238000, C438S247000, C438S256000, C438S398000, C438S758000, C257SE21038, C257SE21314, C257SE21649, C257SE27038, C257SE27094

Reexamination Certificate

active

07951682

ABSTRACT:
A method for fabricating a capacitor in a semiconductor device includes forming an insulation layer over a substrate, forming a storage node contact plug passing through the insulation layer and coupled to the substrate, recessing the storage node contact plug to a certain depth to obtain a sloped profile, forming a barrier metal over the surface profile of the recessed storage node contact plug, forming a sacrificial layer over the substrate structure, etching the sacrificial layer to form an opening exposing the barrier metal, forming a bottom electrode over the surface profile of the opening, and removing the etched sacrificial layer.

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Notice of Allowance issued from Korean Intellectual Property Office on Sep. 3, 2010.

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