Fishing – trapping – and vermin destroying
Patent
1993-02-18
1994-12-06
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437186, 437191, 437233, 437919, 257377, 257385, 257646, H01L 2120
Patent
active
053710398
ABSTRACT:
A method of fabricating a semiconductor device, in particular of forming a polysilicon film on a step portion of an insulation film made by a trench or a contact hole is disclosed which includes the steps of depositing an amorphous silicon film on the step portion while doping impurities into the amorphous silicon film and carrying out heat treatment to convert the amorphous silicon film into a polycrystalline silicon film, thereby the polysilicon film on a step portion being formed.
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Morie, T. and Murota, J., "Trench Coverage Characteristics of Polysilicone Deposited by Thermal Decompositions of Silane," Japanese Journal of Applied Physics, vol. 23, No. 7, Jul. 1984, pp. L482-L484.
Chaudhuri Olik
Horton Ken
NEC Corporation
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