Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1997-04-17
1999-01-05
Bowers, Charles
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
438 29, 118715, C23C 1400
Patent
active
058562060
ABSTRACT:
A Bragg reflector with a uniform thickness is fabricated by means of an in-situ laser reflectometer. In order to fabricate the Bragg reflector, a plurality of buffer layers are formed on a semiconductor substrate. Then, first and second epitaxial layers are alternatively grown on the buffer layers. While growing the epitaxial layers, the thickness of the first and second epitaxial layers are continuously measured by using a laser beam having the same wavelength as a reflective wavelength of the Bragg reflector. In this way, the thickness of the Bragg reflector is precisely controlled according to the measurements, so that the Bragg reflector may be fabricated uniformly with a predetermined thickness.
REFERENCES:
patent: 5472505 (1995-12-01), Lee et al.
Frateschi et al., "In Situ LaserReflectometry Applied to the Growth of AIXGa1-xAs Bragg Reflectors by Metalorganic Chemical Vapor Deposition", Electronics Letters, vol. 27, No. 2, pp. 155-157, Jan. 17, 1991.
D. G. Deppe, et al. AlGaAs-GaAs and AlGaAs-GaAs-InGaAs vertical cavity surface emitting lasers with Ag mirrors, J. Appl. Phys., vol. 66, No. 11, pp. 5629-5631, Dec. 1, 1989.
Frateschi, N.C., et al., In situ laser reflectometry applied to the growth of Al.sub.x Ga.sub.1-x As bragg reflectors by metalorganic chemical vapour deposition, Electronics Letters, vol. 27, No. 2, pp. 155-157, Jan. 17, 1991.
Gourley, P.L., et al. Epitaxial surface-emitting laser on a lattice-mismatched substrate, Appl. Phys. Lett., vol. 60, No. 17, pp. 2057-2059, Apr. 27, 1992.
Koyama, F., et al. GaAlAs/GaAs MOCVD growth for surface emitting laser, Japanese Journal of Applied Physics, vol. 26, No. 7, pp. 1077-1081, Jul., 1987.
Baek Jong-Hyeob
Lee Bun
Bowers Charles
Christianson Keith
Electronics and Telecommunications Research Institute
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