Etching a substrate: processes – Forming or treating electrical conductor article
Reexamination Certificate
2007-04-24
2007-04-24
Ahmed, Shamim (Department: 1765)
Etching a substrate: processes
Forming or treating electrical conductor article
C216S067000, C216S088000, C216S041000, C438S692000, C438S706000
Reexamination Certificate
active
11011038
ABSTRACT:
Bottom electrodes of stacked capacitor DRAM cells are formed by depositing a metal layer on the side walls of trenches within a hard mask layer, which serves as a mold for the bottom electrode elements. Prior to depositing the hard mask layer a sacrificial first metal layer is disposed, which leads to a electrical conductive surface on the semiconductor wafer. The mask layer is wet-etched to release the bottom electrode as free standing elements on the semiconductor surface. Using the conductive path provided by the first and the second metal layer, the bottom electrodes are polarized in a cleaning liquid bath during a wafer drying process. The generated repulsive electric field overcomes the attractive forces between the neighboring bottom electrode elements induced due to capillary effects of the liquids used for etching and cleaning.
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Ahmed Shamim
Edell Shapiro & Finnan LLC
Infineon - Technologies AG
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