Method for fabricating bipolar transistor

Fishing – trapping – and vermin destroying

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Details

437 89, 437131, 437128, 148DIG59, 148DIG67, H01L 218222

Patent

active

054847370

ABSTRACT:
Disclosed is a fabrication of a bipolar transistor with a super self-aligned vertical structure in which emitter, base and collector are vertically self-aligned, the fabrication method comprising the steps of forming a conductive buried collector region in a silicon substrate by using ion-implantation of an impurity and thermal-annealing; sequentially forming several layers; selectively removing the nitride and polysilicon layers to form a pattern; sequentially forming a silicon oxide layer, a third layer and a silicon oxide layer thereon; forming a patterned photoresist layer thereon to define active and inactive regions and removing several layers on the active region to form an opening; forming a side wall on both sides of the opening; forming a collector on a surface portion of the buried collector region up to a lower surface of the polysilicon layer; removing the side wall and the third nitride layer to expose a side surface of the second polysilicon layer; selectively forming a base on an upper surface of the collector including a side surface of the polysilicon layer; forming side wall oxide layer on both sides of the base and the silicon oxide to define an emitter region; forming an emitter on the base; and forming electrodes thereon. In the method, an active region is defined by a photolithography, and thereby a trench isolation acting as factors of lowering in integration and device-performance can be omitted in the method. As a result, fabrication sequence can be simplified and integration can be improved.

REFERENCES:
patent: 4849371 (1989-07-01), Hansen et al.
patent: 4851362 (1989-07-01), Suzuki
patent: 5008207 (1991-04-01), Blouse et al.
patent: 5039624 (1991-08-01), Kadota
patent: 5326718 (1994-07-01), Klose et al.
patent: 5391503 (1995-02-01), Miwa et al.

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