Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1995-07-10
1996-12-10
Rosasco, S.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430322, 430324, 216 47, 216 48, 216 67, G03F 900
Patent
active
055829392
ABSTRACT:
A method for forming a defect-free phase shift mask includes forming a mask blank having a substrate, an etch stop layer, a phase shift layer and an opaque layer. The etch stop layer and phase shift layer are formed of chemically different materials to allow selective etching and end point detection. Initially the opaque layer is patterned and etched using a process such as e-beam lithography. Then the phase shift layer is patterned and etched using the etch stop layer as an end point. Bump defects formed in phase shift areas are then removed by exposing a resist layer to leave the phase shifters, or alternately just the defects, unprotected. During defect etching, the etch stop layer can again be used to endpoint the etch process. The etch stop layer can also be formed as a phase shift layer to permit removal of indentation defects using a process such as ion milling.
REFERENCES:
patent: 4906326 (1990-03-01), Amemiya et al.
patent: 5085957 (1992-02-01), Hosono
patent: 5382483 (1995-01-01), Young
patent: 5382484 (1995-01-01), Hosono
patent: 5405721 (1995-04-01), Pierrat
"Phase-Shifting Mask Fabrication", E. Pierrat et al., Photomask Technology and Management (1993) SPIE vol. 2087.
Gratton Stephen A.
Micro)n Technology, Inc.
Rosasco S.
LandOfFree
Method for fabricating and using defect-free phase shifting mask does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating and using defect-free phase shifting mask, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating and using defect-free phase shifting mask will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-422805