Method for fabricating and separating semiconductor devices

Details Method for fabricating and separating semiconductor devices Method for fabricating and separating semiconductor devices

2005-11-15

2008-12-02

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S434000, C438S456000, C438S478000, C438S676000, C438S788000, C257SE21175, C257SE21508, C257SE21238

Reexamination Certificate

active

07459373

ABSTRACT:
A method of fabricating and separating semiconductor structures comprises the steps of: (a) partially forming a semiconductor structure attached to a support structure, the partially formed semiconductor structure comprising a plurality of partially formed devices, where the partially formed devices are attached to one another by at least one connective layer; (b) forming a partial mask layer over at least a part of the partially formed devices; (c) etching the connective layer to separate the devices; and (d) removing the partial mask layer. Advantages of the invention include higher yield than conventional techniques. In addition, less expensive equipment can be used to separate the devices. The result is a greater production of devices per unit of time and per dollar.

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