Method for fabricating an oxynitride film for use in a semicondu

Details Method for fabricating an oxynitride film for use in a semicondu Method for fabricating an oxynitride film for use in a semicondu

1995-04-26

1996-12-24

Kunemund, Robert

Fishing, trapping, and vermin destroying

437241, H01L 21316, H01L 21318

Patent

active

055873448

ABSTRACT:
The invention provides a method and an apparatus for fabricating a semiconductor device having a silicon oxynitride layer deposited on a semiconductor substrate by means of plasma-enhanced chemical vapor deposition with radio-frequency field being applied to the semiconductor substrate. The method and apparatus use a silane gas, an argon gas and a nitrogen gas as process gases on condition that a flow rate ratio of the argon gas to the silane and nitrogen gases is in the range of at least 1.1, and preferably 2.0 or less. The method and apparatus preferably further use an oxygen gas on condition that a flow rate ratio of the nitrogen gas to the oxygen and nitrogen gases is in the range of at least 0.25, and preferably 0.6 or less. By controlling flow rate ratios of the above mentioned gases in the above mentioned range, the invention provides a silicon oxynitride layer having enhanced burying characteristic and water-permeability resistance and also having smaller dielectric constant and layer stress.

REFERENCES:
patent: 4656729 (1987-04-01), Kroll, Jr. et al.
patent: 4854263 (1989-08-01), Chang et al.
patent: 4894352 (1990-01-01), Lang et al.
patent: 5043152 (1992-03-01), Bonet et al.
patent: 5434109 (1995-07-01), Geissler et al.
"Silicon Nitride Formation From a Silane-Nitrogen Electron Cyclotron Resonance Plasma," Barbour et al., J. Vac. Sci. Technol. A 9 (3), May/Jun. 1991, pp. 480-484.

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