Method for fabricating an optical semiconductor device

Details Method for fabricating an optical semiconductor device Method for fabricating an optical semiconductor device

1991-08-26

1993-10-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437129, 148DIG26, H01L 2120

Patent

active

052504620

ABSTRACT:
A method for fabricating an optical semiconductor device includes the steps of forming at least two stripes of dielectric parallel to each other with a predetermined interval on a semiconductor substrate, growing a crystal selectively between the two stripes, and forming a multi-layer structure which is required to have a width determined by the crystal grown between the two stripes. In such a method, the width of the multi-layer structure including an active layer or a waveguide is controlled precisely, because there is no step of etching a semiconductor layer, so that the characteristics of the device may improve and the yield may increase.

REFERENCES:
patent: 4826784 (1989-05-01), Salerno et al.
patent: 4948751 (1990-08-01), Okamoto et al.
Patent Abstract of JP-A-62 144 385.
Patent Abstract of JP-A-61 104 687.

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