Method for fabricating an optical integrated circuit

Details Method for fabricating an optical integrated circuit Method for fabricating an optical integrated circuit

1994-12-20

1997-08-26

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438 41, H01L 2120

Patent

active

056610777

ABSTRACT:
Disclosed is a method for fabricating an optical integrated circuit capable of obtaining a current confinement and a maximum opto-coupling efficiency by using a simple process, in a case where an active device such as an optical waveguide and an optical amplifier. The method comprises a step for growing layers constituting the optical device over an InP substrate, a step for etching the grown layers by use of a wet etching method or a dry etching method of RIE along a plane perpendicular to a (001) plane, and a step for growing a core layer and a clad layer of the waveguide to be optically connected by use of a molecular organic chemical vapor deposition.

REFERENCES:
patent: 5084894 (1992-01-01), Yamamoto
patent: 5400356 (1995-03-01), Bringams et al.
Wolf et al. in "Optical Communications", vo. 3(5), Sep./Oct (1992), pp. 517-521.

Affiliated with

Also associated with

Rating

Method for fabricating an optical integrated circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating an optical integrated circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating an optical integrated circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1987991