Method for fabricating an integrated semiconductor component

Details Method for fabricating an integrated semiconductor component Method for fabricating an integrated semiconductor component

2005-08-02

2005-08-02

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S425000, C438S426000, C438S435000, C438S439000, C438S692000, C438S928000, C438S976000

Reexamination Certificate

active

06924209

ABSTRACT:
A method for the fabrication of an integrated semiconductor component, in which at least one isolation trench is formed, a first layer of a nonconductive material is applied by a nonconformal deposition method, and a second layer of a nonconductive material is applied by a conformal deposition method at least to the back surface of the semiconductor component.

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