Method for fabricating an integrated field emission device

Details Method for fabricating an integrated field emission device Method for fabricating an integrated field emission device

1997-02-28

1999-07-27

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Electron emitter manufacture

438 28, H01L 2100

Patent

active

059305894

ABSTRACT:
A method for fabricating an integrated field emission device (90) includes the steps of: (1) providing a substrate (52), (2) forming a conductive layer (54) on the substrate (52), (3) depositing a dielectric layer (56) on the conductive layer (54), (4) forming an emission well (62) in the dielectric layer (56), (5) forming an emissive film (72) over the dielectric layer (56) so that the emissive film (72) extends partially into the emission well (62) to define an emissive edge (94) within the emission well (62), and (6) selectively etching the dielectric layer (56) proximate to the emissive edge (94) so that electrons emitted by the emissive edge (94) are received by the conductive layer (54).

REFERENCES:
patent: 5316511 (1994-05-01), Lee
patent: 5382867 (1995-01-01), Maruo et al.
patent: 5401676 (1995-03-01), Lee
patent: 5735721 (1998-04-01), Choi

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