Method for fabricating an integrated circuit including...

Details Method for fabricating an integrated circuit including... Method for fabricating an integrated circuit including...

2010-08-13

2011-10-18

Landau, Matthew (Department: 2813)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C438S103000, C438S131000, C438S132000, C257SE21004, C257SE45002

Reexamination Certificate

active

08039299

ABSTRACT:
An integrated circuit is fabricated by providing a preprocessed wafer including a first electrode, depositing a dielectric material over the preprocessed wafer, etching an opening in the dielectric material to expose a portion of the first electrode and depositing a first resistivity changing material over exposed portions of the etched dielectric material and the first electrode. The first resistivity changing material is planarized to expose the etched dielectric material. A second resistivity changing material is deposited over the etched dielectric material and the first resistivity changing material, and an electrode material is deposited over the second resistivity changing material.

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