Method for fabricating an insulating film from a silicone resin

Details Method for fabricating an insulating film from a silicone resin Method for fabricating an insulating film from a silicone resin

1991-03-11

1993-12-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437231, 437238, 156643, 156663, H01L 2100, H01L 2102, H01L 21469, H01L 2131

Patent

active

052702596

ABSTRACT:
A silicone resin is applied on a substrate to form a coating film. The coating film is subjected to a reactive ion etching in an atmosphere containing at least O.sub.2. Thus, the film is inorganized in its surface and has a distribution of the residue, an organic radical, contained therein gradually increasing in the depth thereof. This permits an insulating film having excellent heat endurance to be formed without generation of any cracks. This insulating film is very useful as an interlayer insulating film for multi-layer wiring.

REFERENCES:
patent: 4349609 (1982-09-01), Takeda et al.
patent: 4464460 (1984-08-01), Hiraoka
patent: 4723978 (1988-02-01), Clodgo et al.
Schiltz, A., Advantages of Using Spin-On-Glass Layer in Interconnection Dielectric Planarization, Microelectronic Engineering, 5, 1986, North-Holland, pp. 413-421.
Butherus, O.sub.2 plasma-converted spin-on-glass for planarization, J. Vac. Sci. Tech. B3(5), Sep./Oct. 1985, pp. 1352-1356.
Sze, VLSI Technology, p. 312, McGraw-Hill, 1983.

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