Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1975-09-11
1976-07-27
Lazarus, Richard B.
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
29 2517, 291821, H01J 912
Patent
active
039711102
ABSTRACT:
An improved technique for forming an electron emitting cathode of iridium d similar noble metals. A mixture of powders including a matrix material of one of the noble metals and a pore forming material of silver is shaped into a cathode configuration and sintered at a temperature sufficient to evaporate the silver, thereby producing a porous matrix. The matrix is impregnated with an active material and dried to produce a cathode having increased electron emission characteristics allowing operation at lower temperatures for longer time periods.
REFERENCES:
patent: 3069757 (1962-12-01), Beggs et al.
patent: 3164466 (1965-01-01), Yasuda et al.
patent: 3290124 (1966-12-01), Holtzclaw, Jr.
Haas George A.
Thomas Richard E.
Lazarus Richard B.
Montanye George
Schneider Philip
Sciascia R. S.
The United States of America as represented by the Secretary of
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