Method for fabricating an electrical insulator

Semiconductor device manufacturing: process – Semiconductor substrate dicing – Beam lead formation

Reexamination Certificate

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C438S460000

Reexamination Certificate

active

10998717

ABSTRACT:
An electrode insulator and method for fabricating the same, wherein a T-shape electrode insulator made of inorganic dielectric material is fabricated perpendicular to the first electrode formed on the substrate, and insulating the second electrode from the first electrode. Inorganic films are used twice to form the insulator, and the T-shaped insulator fabricated is composed of two parts, the lower part is a column of ridge and the upper part is a horizontal cover to form an overhanging portion. Thereby, the overhanging portion can prevent metal film of the second electrode from forming between two insulators, so that the insulation can be achieved.

REFERENCES:
patent: 5701055 (1997-12-01), Miyaguchi et al.
patent: 5962970 (1999-10-01), Miyaguchi et al.
patent: 6099746 (2000-08-01), Kim
patent: 6137220 (2000-10-01), Murayama et al.

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