Semiconductor device manufacturing: process – Semiconductor substrate dicing – Beam lead formation
Reexamination Certificate
2007-06-26
2007-06-26
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Beam lead formation
C438S460000
Reexamination Certificate
active
10998717
ABSTRACT:
An electrode insulator and method for fabricating the same, wherein a T-shape electrode insulator made of inorganic dielectric material is fabricated perpendicular to the first electrode formed on the substrate, and insulating the second electrode from the first electrode. Inorganic films are used twice to form the insulator, and the T-shaped insulator fabricated is composed of two parts, the lower part is a column of ridge and the upper part is a horizontal cover to form an overhanging portion. Thereby, the overhanging portion can prevent metal film of the second electrode from forming between two insulators, so that the insulation can be achieved.
REFERENCES:
patent: 5701055 (1997-12-01), Miyaguchi et al.
patent: 5962970 (1999-10-01), Miyaguchi et al.
patent: 6099746 (2000-08-01), Kim
patent: 6137220 (2000-10-01), Murayama et al.
Bacon & Thomas PLLC
Perkins Pamela E
Smith Zandra V.
Wintek Corporation
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