Method for fabricating an EEPROM

Details Method for fabricating an EEPROM Method for fabricating an EEPROM

1983-10-04

1985-05-21

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29577C, 29578, 148187, 148188, H01L 21265

Patent

active

045177325

ABSTRACT:
A floating-gate tunnel-injection type EEPROM having an excellent quality tunneling insulating layer is fabricated by forming an impurity-doped region under the tunneling insulating layer by diffusion from a neighboring region. The impurity-doped region under the tunneling insulating layer does not have an edge under the tunneling insulating layer, thus ensuring excellent operation of the EEPROM.

REFERENCES:
patent: 4112575 (1978-09-01), Fu et al.
patent: 4218267 (1980-08-01), Maddox
patent: 4332077 (1982-06-01), Hsu
patent: 4409723 (1983-10-01), Harari
patent: 4416708 (1983-11-01), Abdoulin

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