Method for fabricating a Y-shaped capacitor in a DRAM cell

Details Method for fabricating a Y-shaped capacitor in a DRAM cell Method for fabricating a Y-shaped capacitor in a DRAM cell

1996-01-22

1996-09-03

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

055523340

ABSTRACT:
The present invention provides a method of manufacturing a capacitor for a DRAM which uses one mask to define both the node contact hole and the bottom electrode. This novel one mask method uses lateral etch (e.g., oxygen plasma) to enlarge a first opening (the node contact opening) in the resist layer to define a slightly larger second opening which defines the storage electrode. This method reduces the masking steps used and therefore reduces process costs and increases yields. The process comprises forming an insulation layer and a resist layer having a first opening over an active area. A node contact hole is partially etched through the insulation layer. Next, the first opening is enlarged with an lateral etch to form a second slightly larger opening. A storage electrode hole is formed in the insulation layer with the same dimensions as the second opening and the node contact hole is extended to expose the node contact. The resist layer is removed. A polysilicon layer is formed that completely fills the node contact hole and coats the sidewalls of the storage electrode hole. Masking and etching steps form a Y-shaped storage electrode from the remaining first polysilicon layer coating the storage electrode hole.

REFERENCES:
patent: 5049957 (1991-09-01), Inoue et al.
patent: 5084405 (1992-01-01), Fazan et al.
patent: 5185282 (1993-02-01), Lee et al.
patent: 5399518 (1995-03-01), Sim et al.
patent: 5403766 (1995-04-01), Miyake
patent: 5403767 (1995-04-01), Kim
patent: 5443993 (1995-08-01), Park et al.

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