Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2006-04-11
2006-04-11
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S029000, C438S032000, C438S038000
Reexamination Certificate
active
07026178
ABSTRACT:
Methods for fabricating a VCSEL having current confinement, the VCSEL having a substrate, a semiconductor active region, and a bottom mirror disposed between the substrate and the active region. A first top spacer layer is epitaxially grown on the active region, the first top spacer layer comprising a current-spreading buffer layer disposed on the active region, a current-confinement layer disposed on the buffer layer, and a current-spreading platform layer disposed on the current-confinement layer, wherein the combined thickness of the platform and current-confinement layers is less than the thickness of the buffer layer. A current-confinement structure having an annular region of enhanced resistivity and a central aperture of comparatively lower resistivity is formed in the current-confinement layer using ion implantation. Subsequently, epitaxial regrowth is performed to form a second top spacer layer on the platform layer, said second top spacer layer comprising a top current-spreading layer. The resulting current-confinement structure is the result of a shallower ion implantation and thus has more precise dimensions and can be closer to the active region.
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Anselm Klaus Alexander
Hwang Wen-Yen
Applied Optoelectronics, Inc.
Kinsella N. Stephan
Le Dung A.
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