Method for fabricating a tri-state read-only memory device

Details Method for fabricating a tri-state read-only memory device Method for fabricating a tri-state read-only memory device

1995-09-19

1997-12-02

Tsai, Jey

Fishing, trapping, and vermin destroying

437 45, 437 52, H01L 218246

Patent

active

056935510

ABSTRACT:
A tri-state read-only memory device and its fabrication method are disclosed herein. After a plurality of word lines are formed and spaced apart in parallel through patterning by a shielding layer, insulating blocks are formed to fill the trenches among the word lines. Then removing the shielding layer, sidewalls of the insulating blocks are revealed, and spacers are formed on the sidewalls thereof. The spacers above the first state regions are removed to form the conductive width of the channel regions in three forms. By merely applying one code-implantation, the ROM device are coded into on of three states at the same time. In addition, the disposition of the insulating blocks by liquid-phase deposition prevents the misalignment that often occurs with the conventional method.

REFERENCES:
patent: 5429974 (1995-07-01), Hsue et al.
patent: 5449632 (1995-09-01), Hong
patent: 5545580 (1996-08-01), Sheng et al.

Affiliated with

Also associated with

Rating

Method for fabricating a tri-state read-only memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a tri-state read-only memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a tri-state read-only memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-800799