Fishing – trapping – and vermin destroying
Patent
1994-07-15
1995-09-12
Chaudhari, Chandra
Fishing, trapping, and vermin destroying
437 24, 437 60, 437927, H01L 218242
Patent
active
054496306
ABSTRACT:
A capacitor structure suitable for use in Dynamic Random Access Memory (DRAM) Integrated Circuit (IC) devices and its method of fabrication is disclosed. The capacitor includes a main or root trench extending vertically into the silicon substrate and at least one buried trench extending horizontally into the side wall of the main trench. The enlarged trench sidewall surface area as a result of the added buried trenches increases the total capacitance of the capacitor and it suitable for use with high density, high data volume memory devices. The buried trenches are formed by implanting oxygen or nitrogen ions into the designated depths of the silicon substrate, subsequently annealing the entire substrate at the absence of gaseous oxygen, and etching away the converted silicon dioxide or silicon nitride. The formed trench system can reduce the accumulation of the structural stress to avoid the formation of crystalline defects and obtain the resulting device with better quality.
REFERENCES:
patent: 4683637 (1987-08-01), Varker et al.
patent: 4853348 (1989-08-01), Tsubouchi et al.
patent: 4925805 (1990-05-01), Van Ommen et al.
patent: 5183775 (1993-02-01), Levy
Huang Cheng-Han
Lur Water
Chaudhari Chandra
United Microelectronics Corp.
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