Method for fabricating a trench bipolar transistor

Details Method for fabricating a trench bipolar transistor Method for fabricating a trench bipolar transistor

1990-05-14

1991-10-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 33, 437 67, 437 78, 437203, H01L 21328

Patent

active

050574434

ABSTRACT:
A bipolar transistor formed in a trench depression such that a single impurity diffusing step is effective to form a buried collector layer electrically connected to a vertical collector conductor. The lateral diffusion forming the vertical collector conductor is effective to form the conductor with a uniform vertical doping profile, thereby reducing non-uniform series collector resistance characteristics. A trench depression sidewall dielectric is formed, and the trench is filled with a transistor silicon material by a selective epitaxial process. Base and emitter region are then formed in the collector epitaxial material.

REFERENCES:
patent: 4666557 (1987-05-01), Collins et al.
patent: 4676847 (1987-06-01), Lin
patent: 4728624 (1988-03-01), Silvestri et al.
patent: 4749661 (1988-06-01), Bower
patent: 4847214 (1989-07-01), Robb et al.
patent: 4860085 (1989-08-01), Feygenson
patent: 4929996 (1990-05-01), Hutter

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